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| SI2302CDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.057 at VGS = 4.5 V 0.075 at VGS = 2.5 V ID (A) 2.9 2.6 Qg (Typ.) 3.5 FEATURES * Halogen-free Option Available * TrenchFET(R) Power MOSFET APPLICATIONS * Load Switching for Portable Devices * DC/DC Converter TO-236 (SOT-23) RoHS COMPLIANT G 1 3 D S 2 Top View SI2302CDS (N2)* * Marking Code Ordering Information: SI2302CDS-T1-E3 (Lead (Pb)-free) SI2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current b Symbol VDS VGS TA = 25 C TA = 70 C ID IDM IS TA = 25 C TA = 70 C PD TJ, Tstg 5s 20 8 2.9 2.3 10 0.72 0.86 0.55 Steady State Unit V 2.6 2.1 A Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range 0.6 0.71 0.46 - 55 to 150 W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. t5s Steady State Steady State Symbol RthJA RthJF Typical 120 140 62 Maximum 145 175 78 C/W Unit Document Number: 68645 S-81007-Rev. A, 05-May-08 www.vishay.com 1 SI2302CDS Vishay Siliconix SPECIFICATIONS TA = 25 C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Body Diode Reverse Recovery Charge td(on) tr td(off) tf trr Qrr IF = 3.6 A, dI/dt = 100 A/s VDD = 10 V, RL = 2.78 ID 3.6 A, VGEN = 4.5 V, Rg = 1 8 7 30 7 8.5 2.0 15 15 45 15 15 4.0 nC ns Qg Qgs Qgd Rg f = 1.0 MHz 2.0 VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 3.5 0.6 0.45 4.0 8.0 5.5 nC VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 C VDS 10 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.6 A VGS = 2.5 V, ID = 3.1 A VDS = 5 V, ID = 3.6 A IS = 0.95 A, VGS = 0 V 6 0.045 0.056 13 0.7 1.2 0.057 0.075 20 0.40 0.85 100 1 75 V nA A A S V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test: Pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 VGS = 5 thru 2 V 8 I D - Drain Current (A) VGS = 1.5 V I D - Drain Current (A) 8 10 6 6 4 4 TC = 25 C 2 TC = 125 C TC = - 55 C 2 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 0 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 68645 S-81007-Rev. A, 05-May-08 SI2302CDS Vishay Siliconix TYPICAL CHARACTERISTICS 2.0 25 C, unless otherwise noted 0.070 R DS(on) - On-Resistance () 1.6 I D - Drain Current (A) 0.060 VGS = 2.5 V 1.2 0.050 VGS = 4.5 V 0.8 TC = 25 C 0.4 TC = 125 C 0.0 0.0 TC = - 55 C 0.3 0.6 0.9 1.2 1.5 0.040 0.030 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 400 Ciss 320 C - Capacitance (pF) 5 On-Resistance vs. Drain Current ID = 3.6 A VGS - Gate-to-Source Voltage (V) 4 VDS = 10 V VDS = 15 V 3 VDS = 5 V 2 240 160 Coss 80 Crss 0 0 5 10 15 20 1 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance 1.6 VGS = 2.5 V, ID = 3.1 A 1.4 R DS(on) - On-Resistance I S - Source Current (A) 10 100 Gate Charge TJ = 150 C 1 (Normalized) 1.2 VGS = 4.5 V, ID = 3.6 A 1.0 0.1 TJ = 25 C 0.8 0.01 TJ = - 55 C 0.6 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: 68645 S-81007-Rev. A, 05-May-08 www.vishay.com 3 SI2302CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.12 0.2 R DS(on) - On-Resistance () 0.1 0.10 VGS(th) Variance (V) 0.0 0.08 TJ = 125 C - 0.1 ID = 1 mA - 0.2 ID = 250 A 0.06 TJ = 25 C 0.04 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) - 0.3 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (C) On-Resistance vs. Gate-to-Source Voltage 10 10 Limited by RDS(on)* Threshold Voltage 100 s 8 I D - Drain Current (A) 1 1 ms Power (W) 6 10 ms 4 100 ms 0.1 TA = 25 C Single Pulse 1s 10 s 100 s, DC BVDSS Limited 2 TA = 25 C 0 0.01 0.01 0.1 0.1 1 Time (s) 10 100 1000 Single Pulse Power 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = RthJA = 70 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68645. www.vishay.com 4 Document Number: 68645 S-81007-Rev. A, 05-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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